Abstract
Infrared detectors include both the quantum type and the thermal type. Thermal type infrared detectors can be operated at room temperature and are more economical than the quantum type since they do not need an extra cryogenic cooling system. In this thesis, CMOS IC processes with MEMS technique is used to implement a novel thermal type infrared detector which can obtain a high fill factor, high detectivity, and a low NETD (Noise equivalent temperature difference) value. Furthermore, a differential type sensing circuit has been designed and simulated by using HSpice software. For a thermoelectric detector FPA (Focal Plane Array), a readout circuit using Verilogger software is designed and simulated. The designed infrared detector has been successfully fabricated by TSMC 0.35 Mixed-Signal 2P4M CMOS process through CIC, and the measurement system has been set up to verify the feasibility of the designed in infrared detector. A novel infrared detector with low NETD value (0.0069K), high detectivity value (5.83×10+7 cm Hz1/2/W) and high fill factor (0.85) has been found in this research.