Abstract
In recent years, as semi-conductor manufacturing technology becomes more and more mature, the researches of wireless communication systems increase significantly. The demands of high performance electronic products grow day by day. Therefore, circuits with high data rate, low costs and low power consumption become very popular. Furthermore, as the frequency bands being widely used saturates, desired frequency targets to higher bands and occupies a wider bandwidth to achieve high speed operation. As a result, radio frequency (RF) transceiver system becomes very important. Typical RF transceiver front-ends include power amplifier (PA), voltage-controlled oscillator (VCO), low-noise amplifier (LNA), mixer and antenna. This thesis focuses on the features and designs of millimeter-wave triple-push oscillators. In this thesis, three triple-push oscillators are proposed in 90-nm CMOS process. In work I, a triple push oscillator is realized with 60 degree wires and capacitance-splitting technique to reach better symmetry and higher negative transconductance. The oscillation frequency is 215.4 GHz, the output power is -16.28 dBm and the phase noise is -88.5 dBc/Hz at 1-MHz. The second work uses three unbalanced MOSFET pairs to achieve higher performance of the third harmonic. It has -13.8 dBm output power at 201.2 GHz, and the phase noise is -80.6 dBc/Hz at 1-MHz. Work III uses self-mixing technique to have better symmetry and PMOS push-push frequency doubler to enlarge second harmonic signal. It oscillates at 92.2 GHz with 8.4% frequency tuning range. The output power is -18.2 dBm, and the phase noise is -82.8 dBc/Hz at 1-MHz.