Abstract
As researches about RFID increase, the key component of RFID, power converted circuit, becomes much more important. In this thesis, modeling and optimization of diode-based voltage multiplier circuit is presented. First, there are two kinds of power converted circuit, charge pump and multi-stage rectifier. The operations of those two circuits are discussed. And then analysis and modeling of diode-based voltage multiplier is proposed. The proposed model includes effects of input voltage amplitude, output current (load current), output peak-to-peak ripple voltage, and diode size. Due to the effect of output ripple voltage, the derivation of output ripple voltage is also presented in this thesis. Comparisons between simulations and predicted values from proposed model are presented. It also shows the comparisons between simulation and model after optimized. All simulations are based on TSMC 0.35um CMOS process.