Abstract
Graphene has become a popular material for various electronic applications because of its excellent physical properties, but the lack of band gap limits its performance in these electronic devices. Recently, large-area few layers graphene co-doped with boron-nitride (BNG) has been successfully synthesized and it shows a significant band gap up to 600 meV in our previous studies. Determination of mechanical modulus of BNG is one of the key issues in the development of application in electro-mechanical system. But there is no experimental assessment about the mechanical modulus of the small band gap BNG in the literature. In this thesis, we have demonstrated a different approach to estimate the in plane stiffness of BNG with low BN concentration by estimating the strain induced by stretching the underside flexible substrate from the shift of Raman 2D peak. The in plane stiffness can be obtained from the estimated strains of both graphene and BNG and the well known in plane stiffness of graphene using a theoretical formula. The estimated in plane stiffness value of BNG with 2 at% BN concentration is about 309 N/m. Moreover, the conductivity of BNG has shown to be more sensitive than pristine graphene in response to externally applied strain. This result indicates that BNG is a more suitable future material for strain sensor application.