Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment

Thesis

Chen, Pin Hsuan

Masters, 國立清華大學, 工程與系統科學系

2016

Abstract

鐵電材料

ferroelectric material

因申請專利緣故，資料延後公開

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Title: Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
Translated title: Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
Creators: Chen, Pin Hsuan
Contributors: Wu, Yung Hsien (Advisor)
Awarding Institution: 國立清華大學, 工程與系統科學系; Masters
Theses and Dissertations: Masters, 國立清華大學, 工程與系統科學系
Language: English
Resource Type: Thesis
Date published: 2017