Abstract
The purpose of the report is to construct the device of extremely-thin absorber solar cell. Before we start the work, it is essential to know some basic conditions. To make the device with higher efficiency, we aim to build the finger shape structure in the solar cell device. The finger structure is built on porous ZnO structure, and finally put the absorber and the P-type material into the holes. To avoid the situation that the P-type material in the holes is completely depleted in whole region, so we have to know the carrier density of the material by doping F4TCNQ, and then control the width of the depletion region. In the thesis, we put different quantities of the F4TCNQ into the P3HT and use these to make the diodes as the active layers. After finishing the diodes, we analyze the devices and get the capacitance between the organic semiconductor and the metal interface by the impedance spectroscopy method. According to shottky contact theory, we can get the carrier density from the relation of the inverse of capacitance squared and the voltage. When we get the carrier density, we can calculate the width of the depletion region. As a result, we know the influence of the F4TCNQ doping on the diodes.