Abstract
Abstract In recent years, photonic crystal cavity is one of the most popular studies in the optoelectronic fields. Most of the photonic crystal cavities are formed in the suspend membrane structure, owing to this type of laser cavity can have strong confinement for light on the vertical direction. However, most of this type of laser cavity can only operate under pulsed pumped condition, because of the poor heat dispassion of the air on the vertical direction. For future photonic integrated circuits, a small and continuous wave operated laser is the necessary element which is also our goal because of today the scale of the devices became smaller and smaller. Comparing the sapphire substrate with the air, the sapphire substrate has better thermal conductivity and the index is close to the air. So here the sapphire substrate is substituted for the air for heat dissipation. Through the direct wafer bonding method, the InGaAsP wafer is bonded with the sapphire substrate and then the photonic crystal nanocavity is fabricated on the sample. And then the photonic crystal nanolaser is characterized and analyzed.