Abstract
AbstractIn this thesis, the N-doped silicon films were deposited by High Density Plasma Chemical Vapor Deposition (HDPCVD) system. Then we used hall measurement, four point probe, XRD, and microscope to do film characteristic analysis.And then deposit N-doped poly-Si film on the ITO-glass/a-Si sample prepared by Advanced Optoelectronic Lab of NCHU to fabricate a-Si/poly-Si thin film solar cell. Found that poly-Si layers combined with a-Si layers would enhance open circuit voltage (Voc), but for low quality of poly-Si film, the short circuit current( Jsc) and fill factor (FF) are quit low than normal. And by comparison experiment and simulation results of different structure of a-Si/poly-Si thin film solar cells, we found for case P-I-N shown the better performance than P-I-N-N case.