Abstract
The traditional incandescent light bulb is gradually replaced by the light emitted diode, due to its extremely low power efficiency in the visible wave band compared to the light emitted diode. On the other hand, the main luminous band of the traditional incandescent light bulb is located in the near-infrared region (900~3000nm). By using characteristic mentioned above, we manufacture the micro filament as the light source of the near infrared spectroscopy and improve it through microelectronic engineering technology. In this research, we deposit Tungsten and a few high-melting materials onto the Silicon substrate as the light-emitting layer by RF-sputtering. With process followed such as the thermal evaporation of pad, deposition of oxide layer and filament suspension through dry-etching, the filament can behave high thermal isolation and high electrical isolation while applying sTable voltage, which improves the efficiency of gathering heat so that increases its light intensity. However, there is a serious problem in the original process : Curl. The filament mightily curls due to high temperature when it glows. If the filament curls hard enough to make it contact with itself, it will reach short. Furthermore, the extremely high temperature in the short loop causes it to burn apart immediately. In our new experiment, we use some different method to solve this problem, including adding the photonic crystal structure, deposition of high-melting oxide layer, high-temperature thermal annealing process and plasma bombardment. With methods mentioned above, we can avoid the short and open circuit situation while applying the voltage to extend the filament’s service lifetime.