Abstract
In this thesis, we proposed the thin film transistor with multi-layered gate dielectric and multiple nanowire channel combined with Pi gate structure, this structure has the high performance in thin film transistor characteristic. On the other hand, also simultaneously has the non-volatile memory characteristic. In the thin film transistor aspect, we employ the thin film transistor with multiple nanowire channel combined with Pi gate structure, in the same gate pole bias situation, it enhanced the gate extremely control ability; In multiple nanowire channel aspect, because the radius of curvature in the edge is smaller. Under the same gate voltage, it has characteristic of the larger electric field; In Pi gate structure aspect, because the Pi gate structure may control extremely the effective channel width and the channel edge number are more. Under the same gate voltage, it has more carries in the channel and the more high electric field edge characteristic. The thin film transistor with multiple nanowire channel combined with Pi gate structure was manufactured, it may effective reduce the threshold voltage, increases the switch current ratio (On/Off ratio), the steeper subthreshold slope, and the superior driving ability. Its electric properties is ordinary the standard structure the thin film transistor for good. In non-volatile memory aspect, because the Pi gate structure has the larger extremely effective channel width with the more high electric field edge in nanowire channel, it may have the high efficiency when carries on Program/Erase operation. On the other hand, the non-volatile memory characteristics with multiple nanowire channel combined with Pi gate structure, however in the material durable (Reliability) aspect, perhaps the read-write (Endurance) aspect, has the good device reliability. The thin film transistor with multi-layered gate dielectric and multiple nanowire channel combined with Pi gate structure has the enormous potential application extremely on the system on plane conformity. The use of the thin film transistor multi-layered gate dielectric and multiple nanowire channel combined with Pi gate structure simultaneously has the extremely high the driving efficiency and the non-volatile memory characteristic, it may the large simplification system manufacture step.