Abstract
Heterostructure nanowires, with numerous novel properties superior to their pristine states, play important roles as both active and passive units in electronic devices. Owing to the booming demand of sensors in IoT applications, devices with low production cost and well designability become the criteria of next generation detector. For this reason, producing sensors by nanowires printing is a promising way to achieve this goal and have attracted great attentions. The aim of this work attempts to explore the distinctive properties of ZnSe-ZnO heterostructure nanowires and use silver nanowires as conducting electrode to form the all-nanowire flexible device. In this research, we first provide a briefly literature survey about ZnSe, ZnO and Ag nanowires, including growth mechanism and applications. Nanowire growth processes and all-nanowire device fabrication procedures are then presented in the next sections. Last, the detailed material characterizations and photoresponse analysis of pure ZnSe nanowires and ZnSe-ZnO heterostructure nanowires with different lengths of ZnO branches were further discussed. Results of this study suggested that the ZnSe nanowires with short ZnO branches show significantly higher and broader photoresponse compared to pure ZnSe nanowires. In green and red light spectrum, an increase of 3835% and 798% in photocurrent were observed. Finally, this study provides a new idea of material design by changing material composition ratio in heterostructure systems.