Abstract
Recently, Flip-chip bonding plays an important role in bonding industries. Rather than traditional wire bonding, flip-chip bonding have many merits including high I/O, smaller size, shorter electrical path and better heat dissipation. Thus, many optoelectronics devices are asked for combination with this technique. The purpose of this research is to develop micro light emitting diode array applying flip-chip technique and aim for finding out the best parameter for flip-chip bonding. Besides, it is hoped to let all pixels lightened, increase yield and achieve well uniformity as process enhanced. At last, the 960 540 mLEDA by flip chip bonding is fabricated with yield rate 46.42%. Because of insulating and hardness of sapphire, micro LED array has many potential in many fields. In response to larger size array and capacity requirements in the future, we use indium as interconnection material which is 6 um high by e-beam evaporation in this thesis. Daisy chain used for evaluating the inter-chip connectivity is also brought to our experiment. After finding out optimal bonding parameter and method for injection of underfill, the smallest single bump resistance in 10um diameter of daisy chain is 0.0597 Ω. Finally, apply the bonding parameter in 960 540 mLEDA. We hope that this research would be dedicated to development of wearable devices and mask-free photolithography in the future and expanding potential applications of LED.