Abstract
In this dissertation, we use the wafer that was grown by MOCVD. We take the wafer to develop the process of making the GaN LED. During the development, we find that ICP、n-type ohmic contact 、p-type ohmic contact and TCL are the most important process to make the GaN LED. So We wedevelop the process about ICP、n-type ohmic contact 、p-type ohmic contact and TCL . We finally use these technology of process to make a GaN LED and we get the working voltage about 3.1V.