Abstract
Graphene consists of a single layer of carbon atoms packed in a 2D honeycomb structure. It is highly promising as a low-dimensional material for next generation devices owing to its high carrier mobility, high crystal quality and economic price. In this thesis, I grow graphene on 6H-SiC with 3.5° miscut and use the Angle-resolved photoemission spectroscopy (ARPES) to probe the electronic structure of materials. We have successfully grown SLG, BLG and few layer graphene and the band structure can be fitted well by a tight-binding model. The best condition to grow graphene is to heat substrates at 1400 °C more than one hour. In our samples, different thickness of graphene with small domains exists on the wafer due to non-uniform temperature distribution. A rectangular shape of SiC substrate will be used to reduce the temperature gradient problem in the future. The band structure of graphene grown on miscut SiC substrate is similar to previous studies on on-axis SiC in the literature. However, small ordered domain of graphene sample limits the resolution to distinguish the change of electronic structure between on-axis and miscut samples.