Abstract
Graphene consists of a single layer carbon atoms packed in a 2D honeycomb structure. It is very highly promising as a low-dimensional material for the next generation devices owing to its high carrier mobility, high crystal quality and economic price. It will be playing an important role to improve the nanotechnology in the future. In this thesis, I successfully grow high quality bilayer graphene on 6H-SiC and use the Angle-resolved photoemission spectroscopy (ARPES) to probe its electronic structure. We obatin a good fitting result by a tight-binding (TB) model in SLG/SiC and BLG/SiC. Importantly, the on-site energy difference caused the gap opening in SLG/SiC and BLG/SiC can be realized by TB fitting. The reason of the gap opening in BLG/SiC is not only attributed to the difference in on-site energy between different carbon atom sites in the same graphene layer, but also originates from the energy difference between different graphene layers. The interlayer spacing of BLG/SiC can be determined from the oscillation period of photoemission intensity for different photon energies. Our result of interlayer spacing d = 3.31 Å for BLG/SiC is slightly smaller than the value in bulk graphite.