Abstract
In this thesis, the p-type lateral diffused MOS (LDMOS) transistor used in this work is implemented with a 0.5 μm 2p3m high-voltage process. To investigate the reliability issue, charge pumping method is used to detect the interface states of the device. And to combine TCAD (Technology Computer Aided Design) simulation supports the analysis of the device. First, we have background review, which contains the introduction of the high-voltage device, the mechanism of hot-carrier degradation, and the methodology of charge pumping. Then the measurement set-up and the characteristic parameters extraction for the virgin devices are discussed. According to measurement result, we observe that Kirk effect will degrade the reliability in short channel (L = 1 μm) device. Due to Kirk effect, it produces a specific double-hump bulk current in short channel device. The hot-carrier degradation experiment is performed in long channel (L = 5 μm) and short channel (L = 1 μm) devices respectively. Both two channel lengths have mainly damage in the P-well region when stresses at the first peak. And when stressed at the second peak, there has serious degradation in whole device. The shift of electric field makes the degradation of on-resistance (Ron) and the shift of threshold voltage (VT, on). The simulation can give the reasonable explanation.