Abstract
In 1990, Holonyak’s group demonstrated a stable oxide of AlAs, formed by wet thermal oxidation, selective wet oxidation of Al(Ga)As/GaAs has generated intense interest in terms of its physical properties and device applications. Over the past few years, wet oxidation of Al(Ga)As has been successfully employed in the fabrication of various vertical-cavity surface-emitting laser (VCSEL) structure. However, there remains an unfulfilled need for a good insulator for metal-insulator-semiconductor to enable the GaAs-equivalent of Si complementary metal-oxide-semiconductor (CMOS) technology. The aim of our experiments was to improve the wet oxidation rate and oxide-semiconductor interface quality by LT GaAs. The oxides were formed by direct wet thermal oxidization of AlAs into AlxOy during post-growth processing. XPS, PL, and Raman Spectra had been carried out for the oxide analysis. And the kinetics parameters A and B had been extracted to be the value of 0.23eV and 0.72eV, respectively. We conclude that the oxidation rate and interface quality had been improved by the propagation of Ga vacancies.