Abstract
The market demand for portable electric equipment increase dramatically year by year. Although transistors develop toward low cost and high density, maintaining device characteristics becomes difficult due to the device fabrication and physics limitations of the device. Designing a device that different from conventional MOSFET is a necessary way. This thesis based on Fin-shaped Tunneling Transistor which operated by quantum tunneling mechanism. Thus, compared with conventional MOSFET operated by drift mechanism, the Tunneling Transistor can achieve fast on/off characteristic. By the Fin-shaped structure, it can affect the active layer electric potential distribution by multi-direction, increasing the gate control ability and enhance the characteristics. Above the discussion, the Fin-shaped tunneling transistor is a device with high-efficiency and good transfer characteristic. In this thesis, we focus on demonstrate that microwave dopant activation technique can help TFETs to form an abrupt tunneling junction. Subthreshold slope and driving current can be greatly enhanced by microwave annealing as the dopant activation method compare to traditional rapid thermal annealing. An interesting phenomenon of negative differential conductance in the output characteristic was observed, which is attributed to hot-carrier effect at the high gate overdrive operation. A positive temperature dependence of transfer characteristic is also observed, which is related to the bandgap narrowing effect and the enhancement of the thermionic field emissions of the grain boundary states. Finally, with the geometric difference between source and drain, we demonstrate a device with high on-state current and low off-state current, simultaneously. This work shows experimental data for device’s reliability; all the data can display Fin-shaped tunneling transistor has applied to high value actually, it would become the next-generation device.