Abstract
In this study, the SnS2 buffer layer was investigated by chemical bath deposition and RF sputter. We provided two morphologies, nano-wall and nano-partical to fabricate high quality SnS2 thin films and used this layer to deposit on CZTS thin film solar cell. The characteristic analysis of these films carried out by Raman spectra, scanning electron microscope (SEM), energy dispersive spectrometer (EDS), UV/VIS spectrophotometer. Optical properties, surface morphology and Raman spectrum are analyzed and we came to the conclusion that the nano-particles deposited with [SnCl4] =0.3M and [TAA] =0.5M for 45min and 55℃, the nano-wall deposited with [SnCl4] =0.1M and [TAA] =0.15M for 45min and 60℃ and the SnS2 thin film deposited with the RF power is 30W and the pressures is 20mTorr have good quality than others. The optical investigations revealed the film was good adhered and uniform and the transmittance was ≧75%, and the optical band gap of these films was found to be about 3eV. And, we found the SnS2 buffer layer with CBD method is better than sputter. Finally, these good parameters are used for SnS2 layer and incorporated with that of CZTS absorber layer to fabricate the solar cell. We found the SnS2 thin film is successfully and uniformly to deposit on CZTS absorber layer.