Abstract
Uncooling infrared detectors are extensively applied in military field. One of the key technology is the performance of sensitive thermal resistance material. The most importance parameter is TCR（Temperature coefficient of resistance）. It is responsible for the resolution of infrared detectors. At the temperature higher than metal-insulator transition temperature, the temperature dependence of resistivity can be described by small polaron model. At the temperature lower than metal-insulator transition temperature, the resistivity of La1-xCaxMnO3 thin film is correlated with magnetization. Our study focus on how does the process parameters like microstructure、composition、oxygen partial pressure、annealing affect TCR. Until now we can get TCR∼3﹪/℃ at room temperature and reach the maximum TCR∼12﹪/℃（At∼110K）.