Abstract
Large-area uniform graphene is required for the development of graphene electronics. Until now, although large-area graphene films can be prepared by either chemical-vapor deposition or SiC substrate sublimation, the uniformity of the films is still unacceptable for practical applications. In this thesis, graphene films are grown on Si (111) substrates by using a RF-sputtering system at high temperatures. Through XPS and Raman measurements, increasing sp2 bonding compositions and D-peak intensities with increasing growth temperatures are observed, which suggest a amorphous carbon film with graphene grains is obtained via this approach. Also observed is the increase of D-peak/G-peak ratios with decreasing RF powers. The results suggest that the growth of graphene films with even better uniformity by using the RF sputtering technique is limited by the C flake sizes deposited on the substrates at the first place. The phenomenon indicates that by supplying even smaller C flakes, graphene films with better crystalline qualities could be obtained. For comparison, the Raman spectrums and I-V characteristics of graphene flakes and devices fabricated by using exfoliation of Scotch tapes from the HOPG are also shown in this thesis.