Leakage Current Suppression of GaN-on-Si SBDs and HEMTs with Substrate Trenches

Thesis

林劭昱

Masters, 國立清華大學, 電子工程研究所

2013

Abstract

氮化鎵

蕭特基二極體

GaN

SBD

因申請專利緣故，資料延後公開

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Title: Leakage Current Suppression of GaN-on-Si SBDs and HEMTs with Substrate Trenches
Translated title: Leakage Current Suppression of GaN-on-Si SBDs and HEMTs with Substrate Trenches
Creators: 林劭昱
Contributors: 徐碩鴻 (Advisor)
Awarding Institution: 國立清華大學, 電子工程研究所; Masters
Theses and Dissertations: Masters, 國立清華大學, 電子工程研究所
Language: English
Resource Type: Thesis
Date published: 2013