Abstract
Silicon-based optical devices have been attracting people’s eyes recently because it can totally revolutionize the bottleneck in today’s IC fabrication industry due to diminishing dimension of component by using photons instead of electrons as data carrier and create a pioneering avenue toward photonic generation. Latterly, some investigating groups successfully demonstrated the first all-silicon laser based on Raman scattering and exhibited as a forerunner for us. In behalf of breaking through several drawbacks as well as ameliorating the performance compared with the previous work, we utilize specific qualities of one-dimensional nanomaterials as backbone to construct silicon nanowires-based optical devices. Therefore, in this thesis we introduce several different growth mechanisms of nanowires and successful synthesize silicon nanowires via diverse fabrication processes in order to optimize the morphology of samples, meanwhile, investigate influence from different experimental parameters. Besides, we further examine unique physical and optical characteristics of silicon nanowires dependent on shape, diameter or orientation occurred from variation of different fabrication processes. In conclusion, we prove that one dimension silicon nanowires indeed promote poor light emission in bulk silicon and achieve better controllability though adequate fabrication process. In the future, we will expect to actualize the lasing effect and further carry out active multifarious optical devices, even realizing a silicon nanowires based optical circuit within one single chip.