Abstract
In this thesis, two low-noise amplifiers for W-band (75-110GHz) applications are discussed regarding their design, simulation, and measurement. For the passive millimeter wave imaging (PMMW) at W-band, we propose a 94GHz LNA with and T transformers implemented in 90-nm CMOS process. By utilizing the transformer technique, the noise can be effectively suppressed; also, the input matching bandwidth can be enhanced as well. In addition, the T transformer technique is employed to reduce the loss from the series resistor in gate inductor, enhancing the performance of the LNA. The LNA achieves the power gain of 15.8dB, a minimum noise figure of 6.8 dB and moderate power consumption of 35 mW. Another LNA, a W-band LNA with coupled resonators, is also implemented in 90-nm CMOS process for W-band applications such as anti-collision radar and passive imaging. Compared with previous studies, mostly using the T matching network for W-band LNA design, this LNA proposes new coupled resonator matching network to obtain a wide 3dB bandwidth due to the provided wideband loading. Furthermore, the transformer technique is adopted to improve the overall noise performance of the LNA. The LNA achieves the power gain of 11.87dB, a minimum noise figure of 7.1 dB under a power consumption of 45 mW. It should be emphasized that the LNA obtains a very wide 3dB-bandwidth up to 24 GHz from 77.5GHz to 101.5GHz. In addition, both amplifiers use the minimum noise measure MMIN technique to optimize their performance and adopt grounded-coplanar waveguide (GCPW) structure with PGS for their minimizing signal and substrate loss.