Abstract
The thin-film transistor (TFT) is the first field-effect transistor, and it was expected to substitute for the vacuum tube applied in the computer. But the TFT was replaced gradually by the Metal-oxide-semiconductor field-effect transistor which has superior performance. The TFT was not paid much attention until the appearance of new application, which was the switch of pixels in LCDs, it was important especially LCDs with large size. The metal-oxide-based TFT has advantages of low cost, low temperature in process, few steps in process, high transparency, and high flexibility. All the aluminum zinc oxide (AZO) reported in the oxide based TFTs literature to date are used as electrode layers. There are no reports available in the literature on AZO based TFTs. In this thesis, the low cost device of thin film transistors have been fabricated by RF sputtering. We investigate the effect of processing parameters, including channel thickness, processing O2/Ar ratio, channel length,and processing substrate temperature, on the performance of TFTs.