Abstract
We model the hybrid extremely thin absorber (ETA) solar cells based on a finger-crossing structure. The exciton dissociation probability is considered in our hybrid ETA solar cell model. Numerical simulation demonstrates that doping is necessary in hybrid ETA solar cells. To obtain higher power conversion efficiency, doping level should be high enough to prevent depletion regions from merging and to lower the series resistance in the neutral region. A high power conversion efficiency can be reached for moderate hole mobility (1e-5cm2/Vs) in p-type polymer if the doping level is high enough. And we optimize the absorber thickness. According to our simulation result, the optimal absorber thickness is around 16nm which is approximately equal to the exciton diffusion length. Power conversion efficiency up to 19.4% is reached with doping level 1e19 cm-3 and thickness 16nm.. The effect absorber carrier mobility and absorber bandgap is also demonstrated and discussed in our work.