Abstract
Graphene have attracted much attention owing to their outstanding mechanical, thermal, and electrical properties. Graphene oxide (GO), a derivative of graphene, has been proven to have semiconductor-like properties. In this work, we have prepared GO/PEO nanocomposites films with various GO contents and tried to establish the relationship between morphology and crystallization behavior of them. The morphology of composites was probed by x-ray scattering. It was found that PEO was intercalated between GO sheets. Besides, GO displays a certain orientation while the concentration is high (GO contents > 5 wt%). On the other hand, the crystallization behavior of PEO situating outside GO gallery was perturbed, where GO was able to act as a nucleating agent to promote the crystallization kinetics of PEO. The crystallizability and crystal growth rate were also modified upon the hybridization.