Abstract
As electronic products with each passing day, IC design must be toward the high density development to meet market demand, the size of the components themselves must also be constantly scaling to respond. However, conventional transistors because of structural problems led to encounter considerable difficulties in miniature on the SCE (Short Channel Effect) and random dopant fluctuation. In this study adopted a novel junctionless structure, the characteristics of such a structure, channel and source and drain of the same doping type, doping concentration is also quite, so the channel to the source electrode and the channel to the drain electrode have no junctions. And it has no Charge Sharing Effect in scaling, because there is no junction to avoid short-channel effect. And doped with the same type, a considerable concentration, the doping process will be easy. There have no energy level difference between gate to channel so that can be avoided DIBL (Drain Induce Barrier Lowing) effect. However, the off state characteristic of junctionless transistor depend on the energy level difference between gate to channel, therefore to shut down the junctionless transistor is not an easy thing, so in this study adopted the multi gate to improve the gate control ability. That achieved better subthreshold characteristics in the off state, and more suitable for scaling, to become the next generation of mainstream transistor.