Abstract
In this thesis, the indium oxide (In2O3) and the tin oxide (SnO2) thin film transistors were fabricated on the SiO2 gate dielectric by using reactive thermal evaporation process in the present of high purity oxygen. Different from the previous reports, the fabricated TFTs exhibit p-type conductivity in its undoped form. After depositing the SnO2 film, annealing temperature was turn to achieve p-channel TFTs. The on/off ratio and the field-effect mobility were ~ 10^3 and 0.011 cm^2 / V s, respectively. The inverter was consisted of two different threshold voltages and an output gain of 2.8 was achieved. Appearance of the p-channel SnO2 TFT adds another dimension to its application in transparent electronics. In2O3 thin films of varying thickness of 5 - 20 nm were fabricated the near room temperature. All the films were exhibited dense grain distribution with a root-mean-square roughness in the range 0.6 - 8.0 nm by using atomic force microscopy. The crystallizations of the films were polycrystalline in nature with preferred (222) orientation. The channel mobility and resistively were found to be a strong function of the thickness of the active layer. Integration of the SnO2 TFT and the In2O3 TFT resulted in complementary inverter with a gain of 11.