Abstract
The purpose of this thesis is to study the amorphous carbon nitride films synthesized on Si substrate by using ECR - CVD system with various microwave powers, negative dc - bias and flow rate ratio of N2 - / C2H2. Plasma chemistry was investigated by OES system during the deposition process. The highest film growth rate that can reach is as high as 353 nm / min. Raman scattering spectra show that all the amorphous carbon nitride films have a graphite strulture. The strong absorption band in the range 1000 - 1700 cm-1 of the FTIR spectrum is the direct evidence of the nitrogen that incorporated into carbon network. XPS analysis shows N / C = 0.38 of amorphous carbon nitride film and there are two different phases of the carbon nitride compound in the film. The N & K analyzer was used to characterize the refractive index and extinction coefficient of the amorphous carbon nitride films. The optical band gap (maximum ~ 2.24 eV) was derived by Tauc's equation, and was related to the microwave powers, negative dc - bias, and flow rate ratio of N2 / C2H2.