Abstract
Nowadays, the wide-spread usage of the large data storage devices contributes to the indispensable status of the NAND Flash memory. With the smallest cell area among the 2D memories, NAND Flash memory holds the superiority in cell density and cost. The state-of-the-art 2D NAND Flash memory has reached 1X nanometer node. However, the technology scaling makes the fabrication of NAND Flash much more difficult than before. Worst of all, the cost caused by the fabrication difficulty even exceed the cost saved by the shrinking cell size. In order to reduce the bit cost while increasing the storage capacity at the same time, the 3D NAND Flash technology is developed. Due to the structural limitation, the random access speed of NAND Flash memory is quite slow. As a result, the parallel sensing to simultaneously read out a large amount of data is essential to enhance the competitive capability of it. We proposed a reverse current sensing scheme for 3DVG BE-SONOS NAND Flash memory with the layer-aware temperature compensation capability. It can support the parallel read to enlarge the data throughput; in addition, the proposed sensing scheme is totally immune to the source line noise and the BL cross-talk noise. Furthermore, the layer-aware temperature compensation can effectively maintain the reliability of the reverse current sensing at -40~125 ̊C.