Abstract
二次離子質譜術(SIMS)已被廣泛應用於矽半導體材料的分析，主要原因為SIMS具有相當高的偵測靈敏度。然而，定量一直是SIMS分析的一大困擾。目前定量的方式主要為利用已知的標準品(多用離子佈植法製備)，求得訊號強度與濃度間的相對感度因子(RSF)，作為未知樣品的濃度轉換用，因此，定量分析的基礎性質探討將是本論文的重點之一。論文內容首先以不同實驗室間的分析結果比對，來評估本身的分析能力水準；繼而對SIMS定量時常用的佈值標準品，探討以不同的佈植能量及劑量製備，觀察其RSF的變化情形，以了解目前一般工業界的製程條件下，其樣品以SIMS作定量分析時標準品的選擇及適用性；接著則是針對日益普遍的低佈植能量樣品，以SIMS作定量及縱深分佈分析時，所需的最佳分析條件的探討，得知降低一次束能量使入射角增加，加氧氣泌流，均可縮小平衡深度，對此類樣品的分佈分析有相當的助益。論文的後半部則是三個以SIMS分析的應用實例，分別是：(1)超淺p+-n接面樣品的SIMS分析條件的探討與不同非晶化層厚度對Ｂ擴散的影響；(2)電漿加強化學氣相沉積(PECVD)法沉積矽氧化層Rp + 阻值偏高原因的探討；以及(3)多層組成樣品(Al-Si- Cu/Ti-W/Ti/Si)的SIMS分析。Secondary Ion Mass Spectrometry (SIMS) has been extensivelyused in the analysis of Si semicon- ductor materials mainly dueto its high sensitivity. However, quantitation remains to bethe major difficulty associated with SIMS analysis. Currentquantitative means used mostly ion-implanted standards withprecisely known-influence to gener- ate determine theconcentration of unknown samples. Therefore, fundamentalstudies about SIMS quanti- tation is among one of the focusingpoint of this dissertation. The reliability of SIMSquantitation were evalu- ated using results of a round-robinanalysis of 11-B implanted Si samples from 5 SIMS laboratories.The RSFs of standard with various implanting energies and doseswere characterized to evaluate their feasibility under currentSi fabricating process. The effects of SIMS measuring conditionupon analyzing low implanting-energy Si samples were studied.The equilibration depth in these samples could be minimizedusing lower primary impact energy and oxygen flooding. Theestablished techniques were used in:(1)ultra-shallow p+-njunction with BF2+ implant,(2)SiO2 deposited by PECVD, and(3)multiple-layer sample Al-Si-Cu/Ti-W/ Ti/Si.