Abstract
A novel photodiode model which better describes the electro-optical behavior of the CMOS image sensor has been developed. The conventional diode model adopted by Bsim 3.3 suffers from the violation between simulation and measurement results. The sources of the violation are analyzed into details. A novel mathematical model is proposed. By using TSMC 0.35μm CMOS technology, photodiodes with different structures have been fabricated and measured. The results can show the relationship between the diode current and the operation voltage, temperature, photo lux and wavelength, respectively. And the results can be used to extract the relevant parameters. Moreover, the proposed mathematical model and the extracted parameters can provide a precise environment for the diode current simulation.