Abstract
In semiconductor devices, Silicon wafer is a indispensable role,and already has a mature process and epitaxial technology. This study is divided into two parts, the first part of the use of silicon centrosymmetric structure to study the behavior of Si (222) forbidden reflection surface. By the integral diffraction ratio with Si (111) and three-beam diffraction methods,we can calculate and obtain the structure factor real and imaginary parts of Si (222). The second part is about the effect of temperature change on the real and imaginary parts of structure factor of Si (2 2 2) (1 3 -1) / (1 -1 3) three-beam iffraction.The purpose of this experiment is a pre-experiment of Si (2 2 2) (1 3 -1) / (1 -1 3) time-resolved experiments, to clarify the phase change,which comes from the temporary state of electon cloud induced by the pulsed laser or the steady state of thermal effects caused by changes in the integral diffraction strength of the contribution.