Abstract
Single-walled carbon nanotubes (CNTs) are synthesized between predefined catalytic silicide pads by chemical vapor deposition (CVD) from 600 C to 900 C. Self-assembled field-effect transistors fabricated with these controlled-growth nanotubes between silicide electrodes show high-level compatibility with current silicon CMOS process. The silicide pads are formed by thermal annealing process of multi-layer thin film consisting of catalytic metal, supporting materials, and silicon with various crystalline structures. Before the synthesis process, silicide pads are pretreated by thermal and plasma to enhance its catalytic ability. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), Raman spectroscopy, and electrical measurement are employed to characterize the physical, chemical, and electrical properties of the self-aligned carbon nanotube field-effect transistors. Furthermore, sensor applications will be discussed with these self-assembled field-effect transistors.