Abstract
In the recent years, CMOS RF has caught the attention of analog and communication engineers, because of its merits of low cost. We also make efforts in developing some useful methodology for the components need in CMOS RF. A CMOS RF receiver need a high performance low noise amplifier(LNA). Be the role of first stage, the performance of LNA is more important. This thesis we propose a low voltage and low power consumption LNA, fabricated with TSMC 0.35 CMOS process. We adopt a folded cascode structure to decrease the supply voltage. At 1.2V supply, the LNA minimum noise figure is 2.3dB, forward gain is 19.6dB and the input third-order interception point is 0dBm while drawing 12.2mA current. In Berkeley SOI process model simulation, we can operate in 0.8V supply voltage, minimum noise figure 1.93dB, and forward gain is 17.6 dB. We also design a new gain control low noise amplifier based on the folded cascode structure. It adopts the concept of differential amplifier, and it can control the forward gain from 19dB to 12.2 dB. At the same time, the minimum noise figure is from 2.1dB to 3.3dB.