Abstract
Amorphous oxide semiconductors (AOSs) are attracted much attention due to low temperature deposition, flexible, transmission, and uniformity. It has been investigated of AOSs, such as ITO, IZO, TiO2, ZnO, In2O3, Ga2O3, IGO, a-IGZO, etc. Especially, the thin film transistors (TFTs) with a-IGZO thin film as active layer perform higher mobility and better reliability than conventional hydrogenated amorphous silicon TFT (a-Si: H TFT). However, the uniformity of a-IGZO TFT is superior to Low Temperature Polycrystalline Silicon TFT (LTPS TFT). In addition, the a-IGZO thin film can fabricate at low temperature. Therefore, the a-IGZO TFTs have the potential to replace a-Si: H TFT and LTPS TFT forming Active Matrix Organic Light Emitting Display (AMOLED). Because we can control the carrier concentration of a-IGZO thin film by different process conditions and post treatments, it can form one of three types such as conductor, semiconductor, and insulator. Another breakthrough technology of a-IGZO TFT is to achieve system on panel (SOP). This means that periphery circuits, key devices, driving circuits and memory all integrated on glass substrate. The system nonvolatile memory (NVM) is the key component to realize the system on panel. The thesis studies that NVM employing a-IGZO as charge trapping layer to fabricate the structure forming Al/Oxide/a-IGZO/Oxide/Si (MOIOS). Investigate the effect of memory properties such as program, erase, endurance, and data retention at not annealing, 300oC annealing, or NH3 plasma treatment. The result shows that NVM with a-IGZO as charge trapping layer has good memory property. However, the a-IGZO thin film transfers from conductor characteristic to insulator characteristic result in worse memory property at 300oC annealing or NH3 plasma treatment.