Abstract
The Pi-gate polycrystalline silicon (poly-Si) nanowires tunneling field effect transistor (TFET) charge trapping(CT) nonvolatile memory (NVM) with all programming mechanisms and shows a large memory window and good reliability is demonstrated for the first time. Pi-gate nanowires structure performs faster program/erase speed. Otherwise, the SONOS-type structure can improve excellent reliability. Furthermore, due to the poly-Si channel technology, it is possible to develop in 3D high-density stacked NVM. In FN tunneling programming, operation of conducting current and program/erase are based on all quantum tunneling transportation. Pi-gate T-SONOS NVM generates a large memory window (ΔVth=4.75V at Vg = 17V, tp = 1ms) and excellent reliability of 88 % endurance behavior after 10k P/E cycles and 65 % retained ability for ten years at 85 oC. In CHE programming, Pi-gate T-SONOS NVM presents a large memory window (ΔVth=4V at Vg=8V, Vd=6V, tp=1ms), and 74 % endurance behavior after 10k P/E cycles. Moreover, a superior 81 % retention behavior for ten years at 85 oC is presented. In BBHE programming, Pi-gate T-SONOS NVM performs a high programming efficiency, larger memory window (ΔVth=4V at Vg=3V, Vs=-6V, tp=1ms), excellent reliability of 74 % endurance after 10k P/E cycles and 63 % retention for ten years at 85 oC can be achieved. Based on above-mentioned description, Pi-gate nanowires T-SONOS NVM is suitable to use in future 3D high-density embedded portable applications with low stand-by power consumption and ultra low program voltage.