Abstract
This study proposed the n-channel and p-channel twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory (NVM) with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its p-channel Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 104 program and erase cycles, and after ten years, the charge is 53 % of its initial value. Further, a new generation study of junctionless NVM was studied in this work. The memory is also based on twin structure. It can be programmed but erasing is still a challenge. Surprisingly, the device exhibits a good retention characteristic and have a great potential been used as one time programmable device. In the future, these twin poly-Si FinFET NVM devices have a great potential to be used in multilayer Si ICs in fully functional system-on-panel, active matrix liquid crystal display and 3D stacked flash memory applications.