Abstract
In recent years, III-V compound semiconductor devices have been widely developed and applied to the applications of high frequency, high power and light emitter, particularly, the structure of heterojunction bipolar transistors (HBT). However, the efficiency of power conversion of HBTs is small due to heating and lighting effects, which make the input power always larger than the output power. As a result, we use the HBLET structure with embedded two quantum wells in base region to improve its optical properties. In this work, a standard HBT was first fabricated to fix the process parameters for later fabrication of InGaP/GaAs HBLET. The HBLETs with the different passivation methods were demonstrated and discussed. Our results show that the emitter area effect strongly affects the base ideality factor and the optical response.