Abstract
In this study, the polycrystalline silicon thin films deposited on glass and SiO2 substrate by remote electron cyclotron resonance chemical vapor deposition (remote ECR-CVD) system at a rather low temperature of 250 ℃ with or without hydrogen and deuterium dilution methods were investigated. Moreover, the P-I-N devices were further fabricated on ITO glass substrate by remote ECR-CVD system with hydrogen and deuterium dilution methods. We used remote ECR-CVD system to deposit polycrystalline silicon films and then treat these films with deuterium plasma. From cross section and plane view SEM images, the grain shape of the polycrystalline film transformed to the shape of columnar and the grain size became larger. Furthermore, the hydrogen and deuterium dilution methods were used to deposit polycrystalline silicon by remote ECR-CVD system. We could find out the grain sizes were also larger than the polycrystalline deposited without dilution gas. However, the grain sizes were not obviously changed with increasing hydrogen dilution gas and became slightly larger with increasing the deuterium dilution gas. Finally, the P-I-N devices were then fabricated with hydrogen and deuterium dilution methods. The photo-to-dark current ratio of the P-I-N device fabricated with deuterium dilution method was more than 1000. The leakage current of the P-I-N device fabricated with hydrogen dilution method was much higher than that fabricated with deuterium dilution method.