Abstract
In this thesis, the SrRuO3 and Sr2RuO4 thin films grown by pulse laser deposition (PLD) were studied. In the SrRuO3 work, double-target deposition method was developed to solve the Ru-deficiency problem. In x-ray diffraction (XRD) measurement, clear thickness fringes around the SrRuO3 (002)c diffraction peak were observed both in single-target and double-target growth. The narrowest FWHM of the θ-rocking curve of SrRuO3 was 0.024°. In addition, with the decrease of the c-axis lattice constant from 3.979 Å to 3.938 Å, the room temperature resistivity became lower from 492.9 μΩ⋅cm to 262.9 μΩ⋅cm (double-target growth). In Sr2RuO4 work, we have grown the Sr2RuO4 thin film with room temperature resistivity = 166 μΩ∙cm and the residual resistivity ratio = 11 on LSAT substrate by single-target method. In double-target deposition, we have grown the Sr2RuO4 thin film on SrTiO3 substrate with well-defined thickness fringes, narrow θ-rocking curve (0.018°) and the lattice constants that are close to the bulk Sr2RuO4 single crystal in XRD measurement. We have pushed the residual resistivity ratio to 35 and residual resistivity to 3.24 μΩ∙cm by growing the Sr2RuO4 film on LSAT in double-target growth. To make the Sr2RuO4 films superconducting, we have to pay more effort to improve the purity (to achieve higher residual resistivity ratio) of the films.