Abstract
SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of Ⅲ-Ⅴ HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. In this thesis, we emphasize on the optimization of Ge profiles, doping concentration levels, and device geometries of the npn SiGe HBTs for Mixer application in RF communication system. Then, a demonstration of the Mixer performances with the optimum SiGe HBTs device is given.