Abstract
Abstract TaN and TaSiN were deposited in an Ar/N2 discharge by reactively sputter . TaN was deposited from Ta target and TaSiN was deposited from Ta target with one half of Si wafer. Analysis of resistivity, texture, atom concentration, inter-diffusion phenomena were carried out by four point probe, XRD, Auger and leakage current. For as-deposited TaSiN film, we can obtain resistivity rising with concentration of Ta. XRD shows the amorphous phase. After RTA process, resistivity of the sample with higher Si concentration can be reduced rapidly. It is due to Ta silicide formation after RTA. For as-deposited TaN film, the resistivity of TaN rise with the concentration of N2. After RTA, more TaN grains appear. The resistivity increases, too. The TaN(111) broad peak also indicates the co-existence of Ta2O5(290) and TaO2(101). Leakage current of Cu/diffusion barrier /P+-N diode was used to investigate barrier performance. The sample of Cu/TaSiN(200A)/P+-N still shows very good resistance against degradation after sintering at 650℃, for 30min. But leakage current measurement of Cu/TaN(200A)/P+-N diodes sintered at 650℃ for 30min show degraded.