Abstract
This thesis presents the design of low noise amplifier with source-degenerated active inductor. The active inductor is targeted at RF applications and is implemented with a standard 65-nm CMOS process. This active inductor is effective to act as a source-degenerated inductor as well as to reduce the chip area and to suppress the noise. The active inductor naturally contributes some noise to the RF circuits. Here, we provide detailed circuit analyses to reduce the noise without degrading the performance of the LNA. The results show that the LNA operates at 1.2V and 2.5V dual supply voltages can simultaneously achieve the power gain of 22.3 dB and the noise figure of 3.46 dB which are among the best reported values.