Abstract
In recent years, the light emitting diode (LED) industry have considerable development not only in epitaxial process but also in aspect of package. It’s luminous efficiency has already exceed 100 lm/W, which is the threshold of the green energy representative. Their small mass and volume, solid state construction, multi-color, easy modulation, and long-life characteristics make the solid state lighting become a general trend, and bring a competitive market in people's livelihood and lighting. In our dissertation, we demonstrate a high-speed AlGaInP-based light-emitting diode at wavelength of around 650nm using the wet etching to forming self-confined current injection structure with different diameter of mesa, and the different dimension of bonding pad. And we discusses the design concept, fabrication and performance characteristics of different LEDs device parameters. Our efforts were directed at finding the best compromise between device characteristics and at devising ways to improve modulation behavior without essentially affecting the other parameters. The smaller device dimension will thus lead to the higher 3dB frequency bandwidth. It is attributed to the shorter carrier lifetime at higher current density and smaller RC time constant limited bandwidth.