Abstract
The thin-film transistors (TFTs) is the first field-effect transistor, and it was expected to substitute for the vacuum tube applied in the computer. But the TFT was replaced gradually by the Metal-oxide-semiconductor field-effect transistor which has superior performance. The TFT was not paid much attention until the appearance of new application, which was the switch of pixels in LCDs, and it was important especially LCDs with large size. In the thesis, thin-film transistors (TFTs) of indium oxide were fabricated on SiO2 gate dielectric and using reactive thermal evaporation process of high purity oxygen then oxygen plasma treatment to oxidize the indium oxide thin film. Compares with the indium oxide which oxidizes with the high tempering annealing, the advantage of oxygen plasma oxidation just only need under the room temperature. And it can simplify the fabrication process and realize flexible electronic with various thin-film transistor application. In this experiment, we change the oxygen plasma power and the oxidized time to discuss the performance of the indium oxide transistors. When the condition of oxygen plasma was 1000 W, 50 sccm and oxidation time was 90 minutes, the proportion of oxygen and the indium most is close to 3:2. The field effect electronic mobility approximately is 0.32cm2/Vs, the on/off ratio of the device is 106. The electronic characteristic of indium oxide thin film transistor was found to be a strong function of the plasma treatment time and power. Therefore we may the simple use oxygen plasma control the indium oxide thin film transistor's properties.