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The Fabrication and Characteristics of Low Temperature Deposition Thin Film Transistor Applied for Plastic Substrate
Thesis

The Fabrication and Characteristics of Low Temperature Deposition Thin Film Transistor Applied for Plastic Substrate

Huan-En Lin
Masters, 國立清華大學, 電子工程研究所
2004

Abstract

薄膜電晶體 塑膠基板 TFT plastic substract
In last years, the flat panel displays (FDPs) are widely used on amount of electronic produce. However, the current technologies of fabrication still fabricate FDPs with glass substrate mostly. Using plastic substrate substitute for glass substrate makes the FDPs with lightweight, portable and even flexible characteristics. First, we investigated the possible degradation of plastic substrate during process due to the temperature impacts on basic plastic substrate characteristics, including absorption and decomposition. Furthermore, the hard coating layer is deposited onto plastic substrate for improving the impacts of temperature. The most thin films are deposited with plasma enhance chemical vapor deposition (PECVD) at 100OC and others are deposited with Electron beam evaporation below 140OC. We had analyzed the characteristics of low temperature deposited thin films to get optimized thin films, which are used to construct TFT on plastic substrate. We had found that SiCN film has superior adhesion with plastic substrate, and good transmittance. The vacuum of chamber was promoted after the SiCN coated on plastic substrate. Furthermore, the TFT with SiON gate dielectric and TiO2 hard coating had been fabricated on plastic substrate successfully. The on/off ratio is 104 and the mobility μ=7E-3 cm2/V.s of the TFT. Besides, we had also fabricated the TFT using TiO2/SiON as gate dielectric, and the on/off ratio and mobility are 103 and 0.3 cm2/V.s, respectively. Nevertheless, the device characteristic of this TFT on plastic substrate was not observed due to the too high leakage current.

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