Abstract
For a long time in agricultural production, fluorescent lamps and high pressure sodium lamp is the most important and the most common artificial light. How to improve the light uniformity, adjust the light quality and research and development of more efficient artificial light has been a very important issue. In the solid state light source applications, in addition to the use of DC or low frequency (Hz-kHz) pulse width modulation (PWM). LED with conventional light sources can not match MHz high-frequency modulation, further broadening the application field. As the development of artificial biological source such as LED. Frequency in MHz, supplemented by selecting the appropriate wavelength of light source, irradiation procedures, can contribute to the bio-energy absorption and more efficient and will solve the problems of mankind's future food crisis. This paper focuses on the AlGaAs high-frequency near-infrared light-emitting diodes development and characterization. First, we design up to high frequency and the balance between the brightness of the epitaxial structure, and then design the appropriate mask for this epitaxial structure, according to the radius of the mask design different emitting area, again to explore the different light-emitting area radius for the characterization of electrical and optical. We use the photolithography technology to define the light radius, then the use of plasma enhanced chemical vapor deposition (PECVD), thermal evaporator, rapid thermal annealing furnace (RTA), plasma enhanced atomic layer deposition (PEALD) and the wet etching process to identify the optimum process conditions in order to facilitate use at high frequency near-infrared light-emitting diode process. We use the measurement of the optical and electrical properties, and analysis of device characteristics. In electrical characteristics, the cut-in voltage and activation energy can be obtained by I-V curve. The built-in potential and the concentration can be obtained by C-V curve. In optical characteristics, L-I curves and the divergence angle can be measured by integrating sphere and photodetector. Finally, we will be the component package in the SMA, it can measure the frequency response of the different light-emitting area radius.