Abstract
1.Improvement of P/E speed for NAN structure trapping layer higher charge tunneling efficiency lower Ig 2.Trapped charge detrap easier for HfO2 compared with Si3N4,but that’s a trade-off : erasing speed □ retention 3.Improvement of endurance characteristics for NAN structure compared with single Si3N4 trapping layer barrier oxide(Al2O3) reduces the trap generation during cycling 4.Simultaneous improvement in P/E speed and retention for Si3N4/Al2O3/HfO2 structure